2FAF-C10R - integrated passive & active device *rohs directive 2002/95/ec jan 27 2003, including annex specifications are subject to change without notice. customers should verify actual device performance in their specific applications. solder bumps silicon die general information features lead free versions available rohs compliant (lead free version)* bidirectional emi filtering esd protection > 25 k volts protects 4 data lines applications cell phones pdas and notebooks digital cameras mp3 players and gps the 2FAF-C10R device, manufactured using thin film on silicon technology, provides esd protection and emi filtering for the data ports of portable electronic devices such as cell phones, modems and pdas. the device incorporates four low pass filter channels where each channel has a series 100 ohm resistor assuring a minimum of ?8 db attenuation from 800 mhz to 3 ghz. the device is suitable for emi filtering of gsm, cdma, w-cdma, wlan and bluetooth frequencies. each internal and external port of the four channels includes a tvs diode for esd protection. the esd protection provided by the component enables a data port to withstand a minimum ? kv contact / ?5 kv air discharge per the esd test method specified in iec 61000-4-2. the device measures 1.33 mm x 2 mm and is available in a 10 bump csp package intended to be mounted directly onto an fr4 printed circuit board. the csp device meets typical thermal cycle and bend test specifications without the use of an underfill material. *rohs compliant versions available electrical characteristics (@ t a = 25 ? unless otherwise noted) thermal characteristics (@ t a = 25 ? unless otherwise noted) parameter symbol min. nom. max. unit operating temperature range t j -40 +25 +85 ? storage temperature range t stg -55 +25 +150 ? per line specification symbol min. nom. max. unit resistance r 80 100 120 capacitance @ 2.5 v, 1 mhz c 24 30 36 pf rated standoff voltage v wm 5.0 v breakdown voltage @ 1 ma v br 6.0 v forward voltage @ 10 ma v f 0.8 v leakage current @ 3.3 v i r 0.05 0.1 ? filter attenuation @ 800-3000 mhz s21 -28 -35 db esd protection: iec 61000-4-2 contact discharge air discharge ? ?5 kv kv power dissipation per resistor p d 100 mw obsolete
dimensions = millimeters (inches) specifications are subject to change without notice. customers should verify actual device performance in their specific applications. mechanical characteristics 2FAF-C10R - integrated passive & active device 1.285 - 1.375 (0.0506 - 0.0541) 1.981 - 2.032 (0.0780 - 0.0800) 0.180 - 0.280 (0.0071 - 0.0110) 0.180 - 0.280 (0.0071 - 0.0110) 0.495 - 0.505 (0.0195 - 0.0199) 0.3 (0.012) 0.245 - 0.255 (0.0096 - 0.0100) dia. 0.430 - 0.440 (0.0169 - 0.0173) 0.430 - 0.440 (0.0169 - 0.0173) a1 a3 a4 a6 c1 c3 b2 b5 c4 c6 0.432 - 0.559 (0.017 - 0.022) 0.330 - 0.457 (0.013 - 0.018) 1.285 - 1.375 (0.0506 - 0.0541) this is a silicon-based device and is packaged using chip scale packaging technology. solder bumps, formed on the silicon die, provide the interconnect medium from die to pcb. the bumps are arranged on the die in a regular grid formation. the grid pitch is 0.5 mm and the dimensions for the packaged device are shown below. reliability data is gathered on an ongoing basis for bourns integrated passive and active devices. ?ackage level?testing of the integrity of the solder joint is carried out on an independent daisy-chain test device. a 25-pin daisy chain component is available from bourns for this purpose (part number 2tad-c25r). this is a 5 x 5 array featuring 0.5 mm pitch solder bumps. the distance to neutral point (dnp) on that component is larger than that of the 2FAF-C10R and is thus deemed suitable for thermal cycle testing. ?ilicon level?reliability performance is based on simila rity to other integrated passive csp devices from bourns. reliability data frequency response loss - db -60 -50 -20 -30 -40 -10 0 frequency - mhz 0.1 1.0 10.0 100.0 1000.0 1000.0 obsolete
specifications are subject to change without notice. customers should verify actual device performance in their specific applications. 2FAF-C10R - integrated passive & active device block diagram how to order 2 faf - c10r __ thinfilm model chipscale no. of solder bumps packaging option r = tape and reel packaged 5000 pcs. / 7 ? reel terminations lf = sn/ag/cu (lead free) __ = sn/pb gnd ext1 r1: 100 ohms r2: 100 ohms int1 ext2 int2 gnd ext3 r3: 100 ohms r4: 100 ohms int3 ext4 int4 the csp device block diagram below includes the pin names and basic electrical connections associated with each channel. please consult the ?ourns design guide using csp?for notes on pcb design and smt processing. pcb design and smt processing obsolete
specifications are subject to change without notice. customers should verify actual device performance in their specific applications. 2FAF-C10R - integrated passive & active device the pin-out for the device is shown below. note also that the device is shown with bottom side solder pads facing up. device pin out the surface mount product is packaged in an 8 mm x 4 mm tape and reel format per eia-481 standard. packaging abc ext1 1 2 ext2 3 4 ext3 5 6 ext4 int1 int2 gnd int3 int4 gnd 2.0 0.05 (.08 .002) 0.3 0.05 (.01 .002) 1.18 0.1 (0.05 0.004) 1.52 0.1 (.06 .004) 1.75 0.1 (.07 .004) 3.50 0.05 (.14 .002) 8.0 0.3 (.31 .01) 0.76 0.1 (.03 .004) orientation of component in pocket backside facing up top side view (into component pocket) 0.3 (0.01) 4.0 0.1 (.16 .004) 4.0 0.1 (.16 .004) 0.25 (0.010) typ. r 1.5 0.1/-0 (.06 .004/-0) dia. max. r pin out function pin out function a1 ext1 c1 int1 a3 ext2 c3 int2 a4 ext3 c4 int3 a6 ext4 c6 int4 b2 gnd b5 gnd dimensions = millimeters (inches) copyright? 2005, bourns, inc. litho in u.s.a. 08/04 e/ipa0411 2FAF-C10R rev. b, 03/05 asia-pacific: tel +886- (0)2 25624117 ?fax +886- (0)2 25624116 europe: tel +41-41 768 5555 ?fax +41-41 768 5510 the americas: tel +1-951 781-5492 ?fax +1-951 781-5700 www.bourns.com reliable electronic solutions obsolete
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